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Storage
There is an increasing need to have instant access to a dramatic explosion of information within the enterprise and across the extended network in high end storage systems, regardless of where it's stored on the network. These high end storage systems require
significantly more memory with extremely fast access rates and high reliability along with very high speed interfaces,
both serial SerDes, running at 10 Gbs and higher and parallel interfaces such as DDR3.
MoSys differentiated and patented 1T-SRAM embedded memory IP enables next generation computing SoCs to have
3 times the density in the same area and 50% lower power consumption than 6T-based memory. In addition, 1T-SRAM
has ultra-low latency random access and superior reliability, with dramatically reduced SER (soft error rate)
susceptibility. In addition, 1T-SRAM is available in a dual-port architecture, making it a perfect fit for high density, low
latency on-chip caches in storage SoCs.
MoSys' differentiated, silicon-proven, high speed interface IP supports data rates from 1Gbs to 10Gbs and above and
all of the key protocols for storage applications, including SATA, SAS, Fibre Channel, PCI Express and
DDR 3/2. In addition to delivering 'off-the-shelf ' IP macros, MoSys will customize our SerDes and DDR IP to precisely
meet your design requirements.
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Products 
